Monomer, resist composition, and patterning process

Details Monomer, resist composition, and patterning process Monomer, resist composition, and patterning process

2009-03-05

2011-11-15

Walke, Amanda C. (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S312000, C430S330000, C430S331000

Reexamination Certificate

active

08057982

ABSTRACT:
A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.

REFERENCES:
patent: 5652084 (1997-07-01), Cleeves
patent: 5686223 (1997-11-01), Cleeves
patent: 5741625 (1998-04-01), Bae et al.
patent: 6448420 (2002-09-01), Kinsho et al.
patent: 6692893 (2004-02-01), Ohsawa et al.
patent: 6743565 (2004-06-01), Mizutani et al.
patent: 6806026 (2004-10-01), Allen et al.
patent: 6891596 (2005-05-01), Rostalski et al.
patent: 6908724 (2005-06-01), Araki et al.
patent: 7037994 (2006-05-01), Sugita et al.
patent: 7399577 (2008-07-01), Yamato et al.
patent: 7449277 (2008-11-01), Hatakeyama et al.
patent: 7569326 (2009-08-01), Ohsawa et al.
patent: 7592125 (2009-09-01), Suzuki et al.
patent: 7741015 (2010-06-01), Hatakeyama et al.
patent: 7771914 (2010-08-01), Hatakeyama et al.
patent: 2008/0096134 (2008-04-01), Sugimoto et al.
patent: 2009/0087786 (2009-04-01), Hatakeyama
patent: 2010/0062379 (2010-03-01), Iwashita
patent: 2000-327633 (2000-11-01), None
patent: 2000310863 (2000-11-01), None
patent: 2004-168748 (2004-06-01), None
patent: 2005008769 (2005-01-01), None
patent: 2005-330369 (2005-12-01), None
patent: 3762758 (2006-04-01), None
patent: 2007-293294 (2007-11-01), None
patent: 2007293294 (2007-11-01), None
patent: 2004/074242 (2004-09-01), None
patent: WO 2007142209 (2007-12-01), None
Machine translation of JP2006-169302.
Machine translation of JP2005-008769.
Machine translation of JP 2007-293294.
B. J. Lin “Semiconductor Foundry, Lithography, and Partners,” Micropatterning Division; TSMC; Inc., 2002; vol. 4690.
S. Owa et al. “Immersion lithography; its potential performance and issues,” Optical Microlithography XVI; 2003; vol. 5040; p. 724.
M. Maenhoudt et al. “Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm,” Optical Microlithography XVIII; 2005; vol. 5754; p. 1508.
M. J. Nasrullah et al. “Poly(4-(1-hydroxyalkyl)styrene based photoresist materials: Design, synthesis and their lithographic performance,” Advances in Resist Technology and Processing XXIII; 2006; vol. 6153; p. 61532F-1-6153F-8.

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