Monolithically integrated VLSI optoelectronic circuits and a met

Details Monolithically integrated VLSI optoelectronic circuits and a met Monolithically integrated VLSI optoelectronic circuits and a met

1994-08-01

1996-12-31

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437 3, 437 4, 437 53, 437107, 437133, H01L 3118

Patent

active

055894046

ABSTRACT:
A monolithically integrated, optoelectronic VLSI circuit is fabricated by growing optical devices on the compound semiconductor surface of a VLSI chip or wafer having pre-existing electronic devices formed thereon. In accordance with an illustrative embodiment of the present invention, a large array of surface normal optical modulating devices such as multiple quantum well modulators is grown on an impurity free surface of a VLSI chip having an array of FETs already provided thereon. The growth of such devices takes place at temperatures below 430.degree. C. on a compound semiconductor surface which has a highly ordered atomic structure. An optoelectronic switch constructed in this manner is capable of addressing electronic chips in systems handling 10,000 or more input/output optical beams.

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