Monolithically-integrated static random access memory device

Details Monolithically-integrated static random access memory device Monolithically-integrated static random access memory device

1999-05-13

2000-11-07

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, 257354, 257369, H01L 2701, H01L 2712, H01L 310392, H01L 2976, H01L 2994

Patent

active

061440736

ABSTRACT:
A monolithically-integrated SRAM cell is described for reducing the cell size, i.e., at least two of a plurality of transistors comprising the SRAM cell are monolithically integrated to define a first transistor and a second transistor, wherein the drain of the first transistor functions as the gate of the second transistor and the drain of the second transistor functions as the gate of the first transistor. This integration eliminates the need for gate-to-drain connections of previous devices.

REFERENCES:
patent: 3969708 (1976-07-01), Sonoda
patent: 5095347 (1992-03-01), Kirsch
patent: 5306906 (1994-04-01), Aoki et al.
patent: 5438538 (1995-08-01), Hashimoto

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