Monolithically integrated semiconductor memory

Details Monolithically integrated semiconductor memory Monolithically integrated semiconductor memory

1982-01-13

1984-04-03

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365149, 307355, G11C 1124, G11C 700

Patent

active

044411715

ABSTRACT:
Monolithically integrated semiconductor memory, including a matrix of identical memory cells disposed in a set of row members and a set of column members, each of the memory cells including a single MOS-field effect transistor and a storage capacitor, a comparator, and a comparison cell, the comparison cell being in the form of a memory cell including a single MOS-field effect transistor and a storage capacitor, the comparator and the comparison cell being assigned to each of the members of one of the sets, each of the comparators within the matrix of single-transistor memory cells including a flip-flop memory cell constructed in complimentary MOS-technology.

REFERENCES:
patent: 4169233 (1979-09-01), Haraszti
patent: 4255679 (1981-03-01), White, Jr. et al.

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