Monolithically integrated semiconductor assembly having a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S469000, C324S765010

Reexamination Certificate

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07851870

ABSTRACT:
A monolithically integrated semiconductor assembly having a power component, and a method for manufacturing a semiconductor assembly, are proposed, a monolithically integrated resistor element being provided between a first terminal and the second region, and a comparatively low-impedance electrical connection through the first region being provided between the resistor element and the second region.

REFERENCES:
patent: 5654863 (1997-08-01), Davies
patent: 5770947 (1998-06-01), Brauchle
patent: 43 34 856 (1995-05-01), None
patent: 44 26 307 (1996-02-01), None
Aitken, R.C. “Test generation and fault modeling for stress testing” Quality Electronic Design, 2002, Proceedings. International Symposium on Mar. 18-21, 2002, Piscataway, NJ, USA, Mar. 18, 2002, S. 96-99, XP010589340.

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