Static information storage and retrieval – Read/write circuit – Electron beam
Patent
1981-08-19
1984-05-22
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
Electron beam
365104, 34082591, G11C 1140, G11C 700
Patent
active
044505370
ABSTRACT:
A monolithically integrated read-only memory has a plurality of word lines, read lines which cross the word lines to form intersections, and field effect transistors connected to the read and word lines, these transistors being selectable via the word lines and functioning as coupling elements between the read lines and circuit point carrying a reference potential. Means are provided for selectively altering a charge state of a gate insulating layer of transistors at certain predetermined selected intersections, the altered charge states changing a threshold voltage of the transistor so as to determine whether or not it is employed as a coupling element. Preferably electron beam scanning is employed to change the charge state of the gate.
REFERENCES:
patent: 3648258 (1972-03-01), Sewell
patent: 3721962 (1973-03-01), Foster et al.
patent: 3876991 (1975-04-01), Nelson et al.
patent: 4173791 (1979-11-01), Bell
patent: 4242737 (1980-12-01), Bate
"Siemens Forschungs-u. Entwicklungsbericht", vol. 4, 1975, Nr. 6, pp. 345-351.
"Semiconductor Memory Design and Application" 1973, pp. 154-155 and 168-169.
"Techn. Rundschau" 35, 1975/76, Nr. 3, pp. 72-84, A Users Handbook of Semiconductor Memories, 1977, pp. 242-245 and 248, 249.
Hecker Stuart N.
Siemens Aktiengesellschaft
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