Monolithically integrated circuit

Details Monolithically integrated circuit Monolithically integrated circuit

1993-12-20

1995-07-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257360, 257401, H01L 2702

Patent

active

054323711

DESCRIPTION:

BRIEF SUMMARY
BACKGROUND OF THE INVENTION

The present invention relates to a monolithically integrated circuit arrangement.
MOSFET power transistors which consist of a plurality of partial transistors (cells) which are connected in parallel and which are arranged in a single monocrystalline semiconductor body consisting of silicon are known All partial transistors can be surrounded by a diffusion zone which is arranged as a guard ring around the cell arrangement of the MOSFET power transistor.
On the other hand, protective circuits are known which serve as a protection for the MOSFET power transistor. In particular, protective circuits provide protection of such transistors against short circuits and overvoltages. The active and/or passive circuit elements assuming said protective function are connected externally as a discrete component to the MOSFET power transistor.


SUMMARY OF THE INVENTION

The monolithically integrated circuit arrangement containing a MOSFET power transistor has the advantage that active and/or passive circuit elements which have protective and/or regulating and/or control functions are monolithically integrated as peripheral circuit elements with the MOSFET power transistor in a single monocrystalline semiconductor body.
In accordance with the present invention, a monolithically integrated circuit arrangement is arranged in a disc-shaped monocrystalline semiconductor body of a first conductivity type. The semiconductor body includes silicon and has a first and second main surface. The monolithically integrated circuit arrangement contains a vertical MOSFET power transistor which includes a plurality of partial transistors connected in parallel and surrounded by a guard ring of a second conductivity type opposite that of the semiconductor body.
Proceeding from the first main surface, at least one zone of the conductivity type of the semiconductor body but of an increased impurity concentration is diffused into the guard ring to form at least one active and/or passive peripheral circuit element which has a protective, regulating, and/or control function.


BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows in a circuit diagram a MOSFET power transistor having a protective circuit which disconnects the MOSFET power transistor in the case of an overload or short circuit.
FIG. 2 is a section through a disc-shaped monocrystalline semiconductor body of silicon which contains the circuit arrangement of FIG. 1 in monolithically integrated form according to a first embodiment of the invention, shown partially broken away.
FIG. 3 shows a second embodiment of a monolithically integrated development of the circuit arrangement of the invention in accordance with FIG. 1, shown in section and partially broken away.
FIG. 4 shows a further development of the circuit arrangement according to FIG. 1.
FIG. 5 shows a section through a monolithically integrated development of a circuit arrangement according to FIG. 4 as third embodiment of a monolithically integrated circuit arrangement according to the invention.


DETAILED DESCRIPTION

In the circuit diagram shown in FIG. 1, T1 is a n-channel MOSFET power transistor consisting of a plurality of partial transistors connected in parallel, S is its source terminal and D its drain terminal. The input terminal G of the MOSFET power transistor T1 is connected by a first ohmic resistor R1 to its polysilicon gate.
An n-channel MOSFET auxiliary transistor T2 is connected with its source electrode to the source electrode of the MOSFET power transistor T1. The drain electrode of the MOSFET auxiliary transistor T2 is connected to the polysilicon gate of the MOSFET power transistor T1. The polysilicon gate of the MOSFET auxiliary transistor T2 is connected on the one hand via a second ohmic resistor R21 to the input terminal G and on the other hand, via the series connection of a third ohmic resistor R22 and a protective diode D1, to the drain terminal D of the MOSFET power transistor T1. Furthermore, the polysilicon gate of the MOSFET auxiliary transistor T2 is connected to the o

REFERENCES:
patent: 4313768 (1982-02-01), Sanders et al.
patent: 5235201 (1993-08-01), Honna

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