Monolithic static memory cell

Details Monolithic static memory cell Monolithic static memory cell

1980-07-16

1982-06-22

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365189, 357 45, G11C 1140

Patent

active

043366040

ABSTRACT:
A monolithic static memory cell has a region of a first conductivity type extending from the upper surface of a semiconductor layer of a second conductivity type carried on a semiconductor body of the first conductivity type and connected to a first drive line. A first zone of the semiconductor layer adjacent the region is covered by a gate connected to a second drive line and separated from the semiconductor layer by a gate insulator. A second zone adjacent the first zone is covered by a conductive coating connected to a supply terminal, the conductive coating being separated from the surface of the semiconductor layer by a thin electrically insulating layer which admits a tunnel current between the surface of the semiconductor layer and the conductive coating.

REFERENCES:
patent: 4288863 (1981-09-01), Adam
patent: 4298962 (1981-11-01), Hamano et al.
Stein et al., "Storage Array and Sense/Refresh Circuit for Single-Transistor Memory Cells," IEEE Journal of Solid-State Circuits, Semiconductor _Memory Design and Applications, pp. 117-119, vol. SC-7, No. 5, Oct. 1972, pp. 336-340.
Kroger et al., "Steady-State Characteristics of Two-Terminal Inversion-Controlled Switches", Solid State Electronics 1978, vol. 21, pp. 643-654.

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