Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1985-01-14
1986-09-30
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, H03F 360
Patent
active
046149155
ABSTRACT:
A monolithic low noise amplifier is provided having at least one stage. Said stage including a Field Effect Transistor (FET) and an inductive series feedback element comprising a transmission line having an end connected to the FET source and an end connected to ground. A load matching network is attached to the FET drain to provide simultaneous noise match and power match.
REFERENCES:
patent: 4525678 (1985-06-01), Lehmann et al.
Della-Mussia, "100 W a 1 GHz Avec Le Premier `SIT` Hyperfrequence du Marche", Electron & Appl. Ind. (France), No. 275, Nov. 1, 1979, pp. 36, 37.
Krowne, "Extending the Low-Frequency Range of GaAs F.E.T. Broadband and Microwave Amplifiers Using Microstrip Transmission Lines," Electronics Letters, vol. 15, No. 6, Mar. 15, 1979, pp. 197, 198.
Nevin et al., "L-Band GaAs FET Amplifier", Microwave Journal, vol. 22, No. 4, Apr. 1979, pp. 82, 83, 92.
Williams et al., "L-Band Cryogenically-Cooled GaAs FET Amplifier," Microwave Journal, vol. 23, No. 10, Oct. 1980, pp. 73-76.
Heston David D.
Lehmann Randall E.
Heiting Leo N.
Mullins James B.
Robinson Richard K.
Sharp Melvin
Texas Instruments Incorporated
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