Monolithic semiconductor integrated circuit ferroelectric memory

Details Monolithic semiconductor integrated circuit ferroelectric memory Monolithic semiconductor integrated circuit ferroelectric memory

1991-11-27

1993-05-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365145, 361330, H01L 2702, H01G 438, G11C 1122

Patent

active

052143007

ABSTRACT:
A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

REFERENCES:
patent: 3728694 (1973-04-01), Rohrer
patent: 3939292 (1976-02-01), Rohrer
patent: 4068217 (1978-01-01), Arnett et al.
patent: 4149301 (1979-04-01), Cook
patent: 4149302 (1979-04-01), Cook
patent: 4195355 (1980-03-01), Rohrer
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 4713157 (1987-12-01), McMillan et al.

Affiliated with

Also associated with

Rating

Monolithic semiconductor integrated circuit ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithic semiconductor integrated circuit ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic semiconductor integrated circuit ferroelectric memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-899570