Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-02
1999-08-17
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257360, 257404, 257516, 257531, H01L 2976, H01L 2362, H01L 2900
Patent
active
059397535
ABSTRACT:
A monolithic integrated circuit die (10) is fabricated to include unilateral FETs (113, 114, 115), RF passive devices such as a double polysilicon capacitor (57), a polysilicon resistor (58), and an inductor (155), and an ESD protection device (160). A first P.sup.+ sinker (28) provides signal isolation between two FETs (113, 115) separated by the first sinker (28) and is coupled to a source region (86) of a power FET (115) via a self-aligned titanium silicide structure (96). A second P.sup.+ sinker (29) is coupled to a bottom plate (44) of the double polysilicon capacitor (57). A third P+ sinker (178) is coupled to a source region (168) of the ESD protection device (160) via another titanium silicide structure (174).
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Cheng Shih King
Liang Han-Bin Kuo
Ma Jun
Ngo David Quoc-Hung
Spears Edward T.
Dover Rennie William
Loke Steven H.
Motorola Inc.
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