Monolithic photodetector

Details Monolithic photodetector Monolithic photodetector

2007-02-14

2010-02-16

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S040000, C257S187000, C257S291000, C257S461000, C257SE31058

Reexamination Certificate

active

07663160

ABSTRACT:
A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3where R1, R2, and R3are any carbonaceous or metal substituents and where one of R1, R2, or R3is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.

REFERENCES:
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patent: 6251700 (2001-06-01), Lin et al.
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patent: 2002/0086166 (2002-07-01), Hendricks et al.
patent: 2005/0001146 (2005-01-01), Quinlan
patent: 2007/0015083 (2007-01-01), Babich et al.
patent: 2829876 (2003-03-01), None
French Search Report, FR675559, Oct. 5, 2006.

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