Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-05-16
2006-05-16
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C372S050121, C438S035000
Reexamination Certificate
active
07045810
ABSTRACT:
A monolithic multiple-wavelength laser device includes a laser section of a first wavelength and a laser section of a second wavelength formed on a single GaAs substrate, wherein the laser section f the first wavelength includes a real guide structure, and the laser section of the second wavelength includes a loss guide structure. In such a multiple-wavelength laser device, loss in wave guiding can be reduced and operating current can be decreased, compared to a conventional device, when the first wavelength is within a wavelength band of about 780 nm and the second wavelength is within a wavelength band of about 650 nm, since the laser section of the first wavelength has the real guide structure.
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Dolan Jennifer M
Jr. Carl Whitehead
Morrison & Foerster / LLP
Sharp Kabushiki Kaish
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