Monolithic microwave integrated circuit on high resistivity sili

Details Monolithic microwave integrated circuit on high resistivity sili Monolithic microwave integrated circuit on high resistivity sili

1994-12-15

1995-09-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257604, 257624, 257625, 257659, 257664, 333246, 333247, H01L 2336, H01L 2329, H01L 2348, H01P 308

Patent

active

054499534

ABSTRACT:
A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX.TM., is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistivity silicon material. An insulating layer is formed in the wafer below the surface area of active silicon, preferably using the SIMOX process. A monolithic circuit is fabricated on the wafer. A ground plane electrode is formed on the back of the wafer. Direct current and rf capacitive losses under microstrip interconnections and transistor source and drain electrodes are thereby minimized. Reduction in the resistivity of the substrate material as a result of CMOS processing can be minimized by maintaining a shielding layer over the bottom surface of the wafer. Microstrip and airbridge connectors, salicide processing and nitride side wall spacing can be used to further enhance device performance. The resulting architecture is an alternative to gallium arsenide integrated circuits for microwave applications.

REFERENCES:
patent: 3416042 (1968-12-01), Thomas et al.
patent: 3489953 (1970-01-01), Thomas
patent: 3508125 (1970-04-01), Ertel et al.
patent: 3514676 (1970-05-01), Fa
patent: 4054895 (1977-10-01), Ham
patent: 4091408 (1978-05-01), Lee et al.
patent: 4724220 (1988-02-01), Calviello
patent: 4753895 (1988-06-01), Mayer et al.
patent: 4758872 (1988-07-01), Hadac
patent: 4766482 (1988-08-01), Smeltzer et al.
patent: 4816893 (1989-03-01), Mayer et al.
patent: 4823136 (1989-04-01), Nathanson et al.
patent: 4864377 (1989-09-01), Widdershoven
patent: 4914491 (1990-04-01), Vu
patent: 5021300 (1991-06-01), Stacey
patent: 5049978 (1991-09-01), Bates et al.
patent: 5060035 (1991-10-01), Nishimura et al.
patent: 5066993 (1991-11-01), Miura et al.
Guerra, M. A., "The Status of Simox Technology", Solid State Technology Nov. 1990.
Kamgar A. et al., "Ultra-Fast (0.5 .mu.M) CMOS Circuits in Fully Depleted SOI Films", IEEE Transaction of Electron Devices, vol. 39, No. 3, Mar. 1992.

Affiliated with

Also associated with

Rating

Monolithic microwave integrated circuit on high resistivity sili does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithic microwave integrated circuit on high resistivity sili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic microwave integrated circuit on high resistivity sili will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-407475