Coherent light generators – Particular beam control device – Mode locking
Patent
1989-05-04
1990-03-06
Sikes, William L.
Coherent light generators
Particular beam control device
Mode locking
372 50, 372 44, 372 32, H01S 3098, H01S 319
Patent
active
049072340
ABSTRACT:
A semiconductor laser structure for generating high frequency modulation of light intensity is disclosed. The apparatus comprises a seminconductor substrate, a semiconductor master laser and first and second semiconductor slave lasers fabricated adjacent to each other on the semiconductor substrate. Bias current applied to the master oscillator is modulated at a preselected frequency to cause the master laser to generate a plurality of optical frequency modulation sidebands. The first and second slave lasers, which are tuned to be close to the preselected first and second sidebands of the master laser, are injection-locked to the first and second preselected sidebands of the master laser.
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Publication, Microwave Signal Generation with Injection-Locked Laser Diodes, by L. Goldberg, Electronics Lett., vol. 19, No. 13, pp. 491-493 (23 Jun. 1983).
Sheffied et al., "An Independently Controllable Multiline Laser Resonator and its Use in Multi-Frequency Injection Locking", Appl. Phys. Lett., vol. 29, No. 9, Nov. 1, 1976, pp. 588-590.
Wang, "Master and Slave Oscillator Array System for Very Large Multiline Lasers", Applied Optics, vol. 17, No. 1, Jan. 1, 1978, pp. 83-86.
Kobayashi et al., "Injection Locking Characteristics of an AlGaAs Semiconductor Laser", IEEE Journal of Quantum Electronics, vol. QE-16, No. 9, Sep. 1980, pp. 915-917.
Goldberg Lew
Weller Joseph F.
Epps Georgia Y.
Jameson George
McDonnell Thomas E.
Sikes William L.
The United States of America as represented by the Secretary of
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