Monolithic integration of microwave silicon devices and low loss

Details Monolithic integration of microwave silicon devices and low loss Monolithic integration of microwave silicon devices and low loss

1995-04-25

1997-03-18

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257482, 257664, 257728, 333246, 333247, H01L 2980, H01L 31112, H01P 308, H01P 100

Patent

active

056125569

ABSTRACT:
A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active devices on the same substrate. The transmission line is provided using polycrystalline silicon since it can have much higher resistivity than single crystal silicon. Accordingly, a circuit is provided wherein active devices are provided in single crystal silicon and interconnects are formed overlying polycrystalline silicon to provide transmission line interconnects between devices and obtain the desired high frequency response. This is accomplished by providing a highly doped silicon substrate of predetermined conductivity type having a less highly doped silicon layer thereon of the same conductivity type with an oxide layer over the less highly doped layer, forming mesas for formation therein of active elements in the structure having valleys between the mesas extending into the substrate, filling the valleys with very high resistivity polysilicon, forming an electrically insulating layer over the polysilicon, forming active elements with contacts thereto in the mesas and forming interconnects between contacts of the active elements extending over the high resistivity polysilicon regions and the electrically insulating material thereover.

REFERENCES:
patent: 4611384 (1986-09-01), Bencuya et al.

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