Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-07-05
2011-07-05
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S172000, C257S192000, C257S392000
Reexamination Certificate
active
07972915
ABSTRACT:
A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.
REFERENCES:
patent: 3767984 (1973-10-01), Sinoda et al.
patent: 4095331 (1978-06-01), Rutz
patent: 4157556 (1979-06-01), Decker et al.
patent: 4615102 (1986-10-01), Suzuki et al.
patent: 4710787 (1987-12-01), Usagawa et al.
patent: 5571734 (1996-11-01), Tseng et al.
patent: 5825079 (1998-10-01), Metzler et al.
patent: 5907777 (1999-05-01), Joseph et al.
patent: 6093952 (2000-07-01), Bandic et al.
patent: 6133593 (2000-10-01), Boos et al.
patent: 6166404 (2000-12-01), Imoto et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6458675 (2002-10-01), Marukawa
patent: 6603179 (2003-08-01), Ando et al.
patent: 6690042 (2004-02-01), Khan et al.
patent: 6773999 (2004-08-01), Yoneda
patent: 6797555 (2004-09-01), Hopper et al.
patent: 6825133 (2004-11-01), Yu et al.
patent: 7052942 (2006-05-01), Smart et al.
patent: 7262446 (2007-08-01), Toyama
patent: 7312472 (2007-12-01), Chiyo et al.
patent: 7339209 (2008-03-01), Brar
patent: 7375407 (2008-05-01), Yanagihara et al.
patent: 7382001 (2008-06-01), Beach
patent: 7402492 (2008-07-01), Jeon et al.
patent: 2001/0015437 (2001-08-01), Ishii et al.
patent: 2001/0034116 (2001-10-01), Lee et al.
patent: 2002/0177261 (2002-11-01), Song et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0205721 (2003-11-01), Nishii et al.
patent: 2003/0218183 (2003-11-01), Micovic et al.
patent: 2004/0041169 (2004-03-01), Ren et al.
patent: 2004/0135161 (2004-07-01), Taylor
patent: 2005/0007200 (2005-01-01), Inoue et al.
patent: 2005/0059197 (2005-03-01), Yamashita et al.
patent: 2005/0062069 (2005-03-01), Saito et al.
patent: 2005/0110054 (2005-05-01), Wohlmuth
patent: 2005/0189561 (2005-09-01), Kinzer
patent: 2005/0277255 (2005-12-01), Asano
patent: 2006/0060871 (2006-03-01), Beach
patent: 2006/0108606 (2006-05-01), Saxler et al.
patent: 2006/0121658 (2006-06-01), Ahn et al.
patent: 2006/0175633 (2006-08-01), Kinzer
patent: 2007/0108547 (2007-05-01), Zhu et al.
patent: 2007/0114569 (2007-05-01), Wu et al.
patent: 2007/0224710 (2007-09-01), Palacios et al.
patent: 2007/0278518 (2007-12-01), Chen et al.
patent: 2007/0295993 (2007-12-01), Chen et al.
patent: 2008/0116492 (2008-05-01), Wu et al.
patent: 2008/0128752 (2008-06-01), Wu
patent: 2008/0191216 (2008-08-01), Machida et al.
patent: 2009/0032820 (2009-02-01), Chen
patent: 2010/0019279 (2010-01-01), Chen
patent: 11121737 (1999-04-01), None
patent: 2004-031896 (2004-01-01), None
Saito, Wataru et al., “High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior”, IEEE Transactions on Electron Devices, vol. 50, Issue 12, Dec. 2003, pp. 2528-2531.
Wu, Y.-F. et al., “30-W/mm GaN HEMTs by Field Plate Optimization”, IEEE Electron Device Letters, vol. 25, No. 3, Mar. 2004, pp. 117-119.
Khan, M. Asif, et al., “Enhancement and Depletion Mode GaN/AlGaN Heterostructure Field Effect Transistors”, Appl. Phys. Lett. 68 (vol. 4, Jan. 22, 1996, pp. 514-516.
Moon, J.S., et al., “Submicron Enhancement-Mode AlGaN/GaN HEMTs”, Device Research Conference, 2002., 60th DRC Conference Digest, 2002, pp. 23-24.
Kumar, V., et al., “High Transconductances Enhancment-Mode AlGaN/GaN HEMTs on SiC Substrate”, Electronics Letters, vol. 39, No. 24, Nov. 27, 2003.
Endho, Akira, et al., “Non-recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance”, Japanese Journal of Applied Physics, vol. 43, No. 4B, 2004, pp. 2255-2258.
Cai, Yong, et al., “High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment”, Electron Device Letters, IEEE, Jul. 2005, vol. 26, Issue 7, pp. 435-437.
Ambacher et al., “Two-dimensional electron gases induced by spontaneousand piezoelectric polarization charges in N-and Ga-face AlGaN/GaNheterostructures.” J. Appl. Phys., vol. 85, No. 6, pp. 3222-3233, Mar. 1999.
Ando et al., “10-W/mm AlGaN—GaN HFET With a Field Modulating Plate,” IEEE Electron Device Letters, vol. 24, No. 5, 289-291, May 2003.
Ando et al., “Novel AlGaN/GaN Dual-Field-Plate FET With High Gain, Increased Linearity and Stability,” IEDM 2005, pp. 576-579, 2005.
Anwar et al. “Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors,” Appl. Phys. Lett. vol. 84, No. 11, pp. 1970-1972, Mar. 2004.
Ao et al., “Copper gate AlGaN/GaN HEMT with low gate leakage current,” IEEE Electron Device Lett., vol. 24, No. 8, pp. 500-502, Aug. 2003.
Arulkumaran et al., “Surface passivation effects on GaN high-electron-mobility transistors with SiO.sub.2, Si.sub.3N.sub.4, and silicon oxynitride,” J. Appl. Phys., vol. 84, No. 4, pp. 613-615, Jan. 2004.
Bahat-Treidel et al., “Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement”, IEEE Trans. Electron Devices vol. 55, No. 12, pp. 3354-3359, Dec. 2008.
Bahl et al., “A New Drain-Current Injection Technique for the Measurement of Off-State Breakdown Voltage in FET's,” IEEE Trans. Electron Devices, vol. 40, No. 8, pp. 1558-1560, Aug. 1993.
Bandic et al., “High voltage (450 V) GaN Schottky rectifiers,” Applied Physics Letters vol. 74, No. 9, pp. 1266-1268, Mar. 1999.
Ben-Yaacov et al., “AlGaN/GaN current aperture vertical electron transistors with regrown channels,” J. Appl. Phys., vol. 95, No. 4, pp. 2073-2078, Feb. 2004.
Bern et al., “Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs,” Solid State Electron., vol. 47, No. 11, pp. 2097-2103, Nov. 2003.
Boguslawski et al., “Native Defects in Gallium Nitride”. Phys. Rev. B, vol. 51, No. 23, pp. 17255-17259, Jun. 1995.
Cai et al., “Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion to Enhancement Mode,” IEEE Electron Device Letters, vol. 53, No. 9, pp. 2207-2215, 2006.
Cai et al., “III-nitride metal-insulator-semiconductor heterojunction field-effect transistor,” Appl. Phys. Lett., vol. 86, No. 3, p. 032109, Jan. 2005.
Karmalkar et al., “Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors,” Appl. Phys. Lett., vol. 82, No. 22, pp. 3976-3978, Jun. 2000.
Cai et al., “Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment,” IEEE Trans. Electron Devices, vol. 53, No. 9, pp. 2223-2230, Sep. 2006.
Cai et al., “Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits,” in IEDM Tech. Dig., Dec. 2005, pp. 771-774.
Cai et al., “High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits,” IEEE Electron Device Lett. vol. 28, No. 5, pp. 328-331, May 2007.
Chen et al., “High-Performance InP-based Enhancement-Mode HEMTs Using Non-Alloyed Ohmic Contacts and Pt-based Buried-Gate Technologies,” Feb. 1996, IEEE Trans. on Electron Devices, vol. 43, No. 2, pp. 252-257.
Chen et al., “AlGaN/GaN dual-gate modulation-doped field-effect transistors” IEEE Electronics Letters vol. 35, No. 11, pp. 933-934, May 1999.
Chen et al., “Dual-Gate AlGaN/GaN Modulation-Doped Field-Effect Transistors with Cut-Off Frequ
Cai Yong
Chen Jing
Lau Kei May
Fox Brandon
The Hong Kong University of Science and Technology
Turocy & Watson LLP
Vu David
LandOfFree
Monolithic integration of enhancement- and depletion-mode... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Monolithic integration of enhancement- and depletion-mode..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic integration of enhancement- and depletion-mode... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2741025