Monolithic integrated semiconductor device of semiconductor lase

Details Monolithic integrated semiconductor device of semiconductor lase Monolithic integrated semiconductor device of semiconductor lase

1986-07-11

1988-07-05

Lee, John

Coherent light generators

Particular component circuitry

Optical pumping

350 9611, 372 45, 372 46, 372 50, G02B 610

Patent

active

047550155

ABSTRACT:
A semiconductor device which includes a semiconductor substrate, an active layer in a quantum well structure disposed on said semiconductor substrate, an optical waveguide formed by a disordering part of said active layer, and a clad layer disposed on said active layer and optical waveguide. As a result of this structure, the coupling efficiency of the active layer and optical waveguide is extremely enhanced, and a high performance semiconductor device is obtained.

REFERENCES:
patent: 4464762 (1984-08-01), Furuya
patent: 4594603 (1986-06-01), Holonyak, Jr.

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