Monolithic integrated circuit with at least one CMOS field-effec

Details Monolithic integrated circuit with at least one CMOS field-effec Monolithic integrated circuit with at least one CMOS field-effec

1995-01-12

1996-06-11

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257588, 257592, H01L 2976, H01L 27082, H01L 2970

Patent

active

055258255

ABSTRACT:
The invention relates to a method of making a monolithic integrated circuit with at least one CMOS field-effect transistor and one npn bipolar transistor wherein a thin oxide layer is covered with a protective polysilicon layer in both the bipolar-transistor area and the field-effect-transistor area.

REFERENCES:
patent: 4475279 (1984-10-01), Gahle
patent: 5424572 (1995-06-01), Solheim
S. M. Sze; "Semiconductor Physics and Technology"; 1985; pp. 110-111.
"New CMOS Technologies" Solid State Devices 1980, pp. 114-117.
"A Single-Poly C-BiCMOS Process with Advanced ITLDD CMOS and Self-Aligned Vertical NPN, PNP devices" Technical Developments, Motorala, Inc., Jul. 1991.

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