Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-08-26
2000-12-12
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
336 83, H01L 2900, H01F 2702
Patent
active
061603031
ABSTRACT:
An integrated circuit and method of fabrication are disclosed for achieving electrical isolation between a spiral inductor and an underlying silicon substrate using standard semiconductor manufacturing process flow. A spiral conductor with square windings is formed in metal layer (20) patterned so that straight runs of successive turns (22, 23, 24) overlie corresponding runs of concentric square rings (16, 17, 18) formed in underlying metal layer (14). A unity gain voltage buffer (30) connects each ring (16, 17, 18) with a respective overlying turn (22, 23, 24).
REFERENCES:
patent: 5478773 (1995-12-01), Dow et al.
patent: 5481131 (1996-01-01), Staudinger et al.
patent: 5539241 (1996-07-01), Abidi et al.
patent: 5559360 (1996-09-01), Chiu et al.
patent: 5583474 (1996-12-01), Mizoguchi et al.
Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS RF Amplifier, Chang et al., IEEE Electron Device Letters, vol. 14, No. 5, May, 1993, pp. 246-248.
Brady III Wade James
Franz Warren L.
Loke Steven H.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Monolithic inductor with guard rings does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Monolithic inductor with guard rings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic inductor with guard rings will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-220756