Monolithic inductor

Details Monolithic inductor Monolithic inductor

1998-09-29

2000-11-07

Dutton, Brian

Semiconductor device manufacturing: process

Making passive device

438238, 438329, 438901, H01L 21331, H01L 218234, H01L 218222

Patent

active

061436143

ABSTRACT:
The monolithic inductor (30) includes a substrate (38), a spiral metal trace (32) disposed insulatively above the substrate (38), where a parasitic capacitance (56) is generated between the spiral metal trace (32) and the substrate (38), and a depletion layer is generated under the spiral metal trace (32) with a depletion junction capacitance (58) coupled in series with the parasitic capacitance (56). The overall capacitance is thus reduced, which enhances the self-resonance frequency of the inductor (30). For the same self-resonance frequency, a thicker metal trace may be used to implement the inductor, resulting in an improved quality factor, Q.

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