Monolithic FET bridge attenuator

Details Monolithic FET bridge attenuator Monolithic FET bridge attenuator

1986-10-02

1988-04-12

Gensler, Paul

Wave transmission lines and networks

Attenuators

307568, 333138, H03H 1124

Patent

active

047377399

ABSTRACT:
A monolithic FET bridge attenuator contains four single gate FETs, the source-drain path of each of which forms a respective arm of the bridge. The attenuation control electrodes (gates) of the FETs in opposite arms of the bridge are connected to a common control voltage. A first pair of diagonally opposing nodes of the bridge are coupled to receive respective input signals that differ in phase by 180.degree.. A second pair of diagonally opposing nodes of the bridge disposed between the first pair of nodes provide a pair of output signals differing in phase by 180.degree.. In effect, each FET has the electrical behavior of a parallel RC circuit, the resistive component of which is controlled by the gate voltage.

REFERENCES:
patent: 3159796 (1964-12-01), Van Sandwyk
patent: 3995174 (1976-11-01), Zrudsky
patent: 4600816 (1986-07-01), McDermott

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