Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-03-15
2005-03-15
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S756000
Reexamination Certificate
active
06867474
ABSTRACT:
An inductance integrated in a monolithic circuit, including a conductive spiral having an internal end connected to a connection track, the spiral and the connection track belonging to a same metallization level, in which the connection between the internal end of the spiral and the connection track is formed by a connecting track belonging to a metallization level higher than the metallization level of the spiral.
REFERENCES:
patent: 5095357 (1992-03-01), Andoh et al.
patent: 1 032 001 (2000-08-01), None
French Search Report from French Patent Application No. 01/12378, filed Sep. 26, 2001.
Patent Abstracts of Japan, vol. 014, No. 425 (E-0977), Sep. 13, 1990 & JP 02 163913 A (Nippon Telegr. & Teleph. Corp.).
Patent Abstracts of Japan, vol. 1996, No. 07, Jul. 31, 1996 & JP 08 064778 A (Toshiba Corp.).
Concord Joël
Noire Aline
Jorgenson Lisa K.
Morris James H.
Rose Kiesha
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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