Vapor phase growth method of oxide dielectric film

Details Vapor phase growth method of oxide dielectric film Vapor phase growth method of oxide dielectric film

2005-03-08

2005-03-08

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S093000, C117S102000, C117S105000

Reexamination Certificate

active

06863726

ABSTRACT:
A vapor phase growth method of an oxide dielectric film for forming an oxide dielectric film having a perovskite crystal structure expressed by ABO3on a substrate according to the present invention includes a first step of sequentially and alternately supplying an A-site layer element material and a B-site layer element material to grow an atomic layer on the substrate to form an early layer or early core, at a first substrate temperature, and a second step of raising the temperature to a second substrate temperature that is higher than the first substrate temperature to crystallize the early layer or early core formed in the first step and simultaneously supplying both the A-site layer element material and the B-site layer element material to form an ABO3film.

REFERENCES:
patent: 2000-58525 (2000-02-01), None
T. Watanabe et al., “Orientation Control of Metalorganic Chemical Vapor Deposition Bi4Ti3O12Thin Film by Sequential Source Gas Supply Method”, Japanese Journal of Applied Physics, vol. 39, No. 9A, Part 1, (Sep. 2000), pp. 5211-5216.*
Y. Sotome et al., “c-Axis-Oriented Pb(Zr, Ti)O3Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method”, Japanese Journal of Applied Physics, vol. 33, No. 7A, Part 1, (Jul. 1994), pp. 4066-4069.

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