Mono gate memory device and fabricating method thereof

Details Mono gate memory device and fabricating method thereof Mono gate memory device and fabricating method thereof

Filed on

2007-06-05

Date issued

2007-06-05

Examiner

Dang, Phuc T. (Department: 2818)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C438S593000

Type

Reexamination Certificate

Status

active

Patent number

11027850

Description

ABSTRACT:
A mono-gate memory device and fabricating method thereof are provided, which may reduce or solve over-erasing problems by implementing a mono split-gate SONOS type non-volatile memory cell, and which do not affect logic circuit characteristics by enabling logic circuit fabrication after completing the ONO structure. The present memory cell includes an ONO layer on the active area of the substrate, a gate oxide layer on the active area adjacent to the ONO layer, a gate on the gate oxide layer and on a portion of the ONO layer, a drain partially covered by the ONO layer, and a source partially covered by the gate oxide layer.

REFERENCES:
patent: 5338954 (1994-08-01), Shimoji
patent: 6703662 (2004-03-01), Koishikawa
patent: 6724661 (2004-04-01), Lee et al.
patent: 2002/0011623 (2002-01-01), Furuhata
patent: 2003/0224564 (2003-12-01), Kang et al.

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