Monitoring VRM-induced memory errors

Details Monitoring VRM-induced memory errors Monitoring VRM-induced memory errors

2008-10-07

2010-06-08

Beausoliel, Robert (Department: 2113)

Error detection/correction and fault detection/recovery

Data processing system error or fault handling

Reliability and availability

C714S005110, C714S006130, C714S013000, C714S014000, C714S047300, C714S708000, C361S090000, C361S111000, C327S020000

Reexamination Certificate

active

07734955

ABSTRACT:
A method and system for improving Field Replacement Unit (FRU) isolation in memory sub-systems by monitoring Voltage Regulator Module (VRM) induced memory errors. A comparator compares the output voltage coming from the VRM to memory. If the comparator detects a VRM output voltage transient that is outside a rated threshold, then a counter is increased by one. If the counter exceeds a count threshold, a VRM error is posted. If a memory failure occurs within a predetermined period of time, then the VRM error pinpoints the VRM output voltage transient as being the likely cause of the memory failure.

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