Monitoring technique for plasma etching

Details Monitoring technique for plasma etching Monitoring technique for plasma etching

1985-05-06

1986-07-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156345, 204192E, 204298, H01L 21306, B44C 122, C03C 1500, B29C 1708

Patent

active

046029818

ABSTRACT:
Plasma potential monitoring during a plasma etching process is accomplished by measuring the RF voltage at an electrode of, for example, a high pressure, high plasma density, symmetric single wafer reactor. The plasma potential is indicative of the plasma density, which has a high sensitivity to secondary electron emission from a wafer surface and yields both process etching endpoint and diagnostic information for a wide variety of processes and process conditions.

REFERENCES:
patent: 4207137 (1980-06-01), Tretola
patent: 4358338 (1982-11-01), Downey et al.
patent: 4362596 (1982-12-01), Desilets et al.

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