Monitoring of nitrided oxide gate dielectrics by...

Details Monitoring of nitrided oxide gate dielectrics by... Monitoring of nitrided oxide gate dielectrics by...

2006-08-08

2006-08-08

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S287000, C438S705000, C438S786000

Reexamination Certificate

active

07087440

ABSTRACT:
The present invention provides, in one embodiment, a method method of monitoring a process for forming a nitridated oxide gate dielectric. A nitrided oxide dielectric layer is formed on a test substrate (110). The nitrided oxide dielectric layer is exposed to an etch process (120). A change in a property of the nitrided oxide dielectric layer is measured as a function of the etch process (130). Other embodiments advantageously incorporate the method into methods for making semiconductor devices and integrated circuits.

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