Monitoring method of an ion implantation process

Details Monitoring method of an ion implantation process Monitoring method of an ion implantation process

1999-03-17

2000-10-31

Font, Frank G.

Optics: measuring and testing

By polarized light examination

Of surface reflection

G01J 400

Patent

active

061411035

ABSTRACT:
A method is to characterize a process of ion implantation and includes a step of the measurement, by a spectroscopic ellipsometer, of the ellipsometric parameters (tan.psi., cos.delta.)of a film of organic resin present on the surface of a wafer that has received ion bombardment. The film of resin includes at least one upper layer of carbonized or damaged resin.

REFERENCES:
patent: 5329357 (1994-07-01), Bernoux et al.
patent: 5666200 (1997-09-01), Drevillon et al.
Vanhellemont et al., Materials Science & Engineering, B5 (1990) Jan., No. 2, "Spectroscopic Ellipsometry Characterization of Silicon-on-insulator Materials", pp. 301-307, May, 1989.

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