Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Compound semiconductor
Reexamination Certificate
2005-11-08
2005-11-08
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Compound semiconductor
C438S486000, C257S075000
Reexamination Certificate
active
06962884
ABSTRACT:
A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth of the silicon material. The plurality of particles have a reduced activation energy within the silicon material. The method subjects the monitor wafer including the plurality of particles into a rapid thermal anneal process. The method includes applying the rapid thermal anneal process at a first state including a first temperature. The first temperature is within a range defined as a low temperature range, which is less than 650 Degrees Celsius. The method includes removing the monitor wafer and measuring a sheet resistivity of the monitor wafer. The method also determines the first temperature within a tolerance of less than 2 percent across the monitor wafer. The method operates the rapid thermal process using a plurality of production wafers if the first temperature is within a tolerance of a specification temperature.
REFERENCES:
patent: 5770512 (1998-06-01), Murakoshi et al.
Huang Dennis
Liu Amy
Wang Tony
Wu Jingang
Lee Calvin
Nelms David
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
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