Monitoring indium phosphide surface composition in the manufactu

Details Monitoring indium phosphide surface composition in the manufactu Monitoring indium phosphide surface composition in the manufactu

1981-03-16

1982-08-10

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, C30B 1910

Patent

active

043436749

ABSTRACT:
Indium phosphide stoichiometry in III-V semiconductor devices is sensitive to processing conditions during liquid phase epitaxy deposition. Disclosed is a method for determining indium-to-phosphorus ratio in an n-type indium phosphide semiconductor surface layer by monitoring photoluminescence at an absorption band at or near 0.99 electron volt.

REFERENCES:
patent: 3565702 (1971-02-01), Nelson
patent: 3677836 (1972-07-01), Lorenz
M. B. Panish, "Heterostructure Injection Lasers", Proceedings of the IEEE, vol. 64, No. 10, Oct. 1976, pp. 1512-1540.
M. B. Panish et al., "Preparation of Multilayer Heterostructures . . . ", Metallurgical Transactions, vol. 2, 1971, pp. 795-801.

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