Monitoring and controlling plasma processes via optical emission

Details Monitoring and controlling plasma processes via optical emission Monitoring and controlling plasma processes via optical emission

1995-11-27

1997-08-19

Breneman, R. Bruce

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

20419213, 20419233, 356316, 36446828, H01L 2100

Patent

active

056584237

ABSTRACT:
A method of monitoring the status of plasma in a chamber using real-time spectral data while conducting an etch process during the course of manufacturing of semiconductor wafers. Spectral data is collected during etching, with the spectral data characterizing an emission of light from etch species contained in the plasma, and maintaining the collected data as reference data. A model of principal components of the data is generated. Additional spectral data is extracted from the plasma and compared with the model. Discrepancies pinpoint the presence of foreign material faults and help determine the cause of the failures to ensure appropriate corrective action.

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