Monitor for semiconductor diffusion operations

Details Monitor for semiconductor diffusion operations Monitor for semiconductor diffusion operations

1977-03-11

1978-07-11

Krawczewicz, Stanley T.

Electricity: measuring and testing

Conductor identification or location

Inaccessible

324 51, 324158R, 29574, 324 64, G01R 2702

Patent

active

041004868

ABSTRACT:
An electrical defect density monitor for semiconductor device fabrication utilizing a silicide of a formed transitional metal (such as platinum silicide) on a surface of a silicon substrate as a resistor in parallel with the resistance of the underlying substrate, including diffused regions, to improve measurement sensitivity of high sheet resistivity areas. The measurement can be employed for measuring the integrity of diffused regions and/or of dielectric coatings.

REFERENCES:
patent: 3304594 (1967-02-01), Madland
patent: 3487301 (1969-12-01), Gardner et al.
patent: 4024561 (1977-05-01), Ghatalia
Benjamin, Semiconductor Resistance Measuring Technique, IBM Technical Disclosure Bulletin, Jun. 1, 1967, p. 97.
Hubacher et al., Detecting Defects in Integrated Semiconductor Circuits, IBM Technical Disclosure Bulletin, Feb. 1972, pp. 2615-2617.
Stelmak, Defects Detection in a Metal-Oxide-Silicon Structure, IBM Technical Disclosure Bulletin, Jun. 1972, pp. 177, 178.

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