Monatomic boron ion source and method

Radiant energy – Ion generation – Field ionization type

Reexamination Certificate

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C250S427000, C250S492210, C315S111810, C438S514000, C438S515000

Reexamination Certificate

active

11132438

ABSTRACT:
Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.

REFERENCES:
patent: 5013604 (1991-05-01), Allen et al.
patent: 6013332 (2000-01-01), Goto et al.
patent: 6452338 (2002-09-01), Horsky
patent: 7022999 (2006-04-01), Horsky et al.

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