MOM capacitors integrated with air-gaps

Details MOM capacitors integrated with air-gaps MOM capacitors integrated with air-gaps

2008-03-10

2011-11-08

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S522000, C257S758000, C257S774000

Reexamination Certificate

active

08053865

ABSTRACT:
An integrated circuit structure combining air-gaps and metal-oxide-metal (MOM) capacitors is provided. The integrated circuit structure includes a semiconductor substrate; a first metallization layer over the semiconductor substrate; first metal features in the first metallization layer; a second metallization layer over the first metallization layer; second metal features in the second metallization layer, wherein the first and the second metal features are non-capacitor features; a MOM capacitor having an area in at least one of the first and the second metallization layers; and an air-gap in the first metallization layer and between the first metal features.

REFERENCES:
patent: 5208725 (1993-05-01), Akcasu
patent: 5445985 (1995-08-01), Calviello et al.
patent: 6110791 (2000-08-01), Kalnitsky et al.
patent: 6117747 (2000-09-01), Shao et al.

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