Molybdenum boride barrier layers between aluminum and silicon at

Details Molybdenum boride barrier layers between aluminum and silicon at Molybdenum boride barrier layers between aluminum and silicon at

1992-07-22

1994-07-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257383, 257751, 257763, 257770, H01L 2348, H01L 2352, H01L 2940, H01L 2976

Patent

active

053291611

ABSTRACT:
Increases in the contact resistance at the aluminum-silicon interface in contact points is inhibited by employing a molybdenum boride conductive barrier layer between the aluminum conductor and the silicon substrate.

REFERENCES:
patent: 4782380 (1988-11-01), Sankar et al.
patent: 4887146 (1989-12-01), Hinode
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4965656 (1990-10-01), Koubuchi et al.
patent: 4976839 (1990-12-01), Inoue
patent: 5061985 (1991-10-01), Meguro et al.
Wolf, "Silicon Processing for the VLSI Era", vol. 2, Lattice Press, Sunset Beach, California, pp. 121-128 (1990).

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