Molecular memory cell

Static information storage and retrieval – Systems using particular element – Molecular or atomic

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S100000, C365S148000, C257SE51006, C257SE51023

Reexamination Certificate

active

06873540

ABSTRACT:
A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system. The active layer having a high-impedance state and a low-impedance state switches from the high-impedance state to the low-impedance state when an amplitude of a writing signal exceeds a writing threshold level, to enable writing information into the memory cell. The active layer switches from the low-impedance state to the high-impedance state when an amplitude of an erasing signal having opposite polarity with respect to the writing signal exceeds an erasing threshold level, to enable erasing information from the memory cell.

REFERENCES:
patent: 3719933 (1973-03-01), Wakabayashi et al.
patent: 3810127 (1974-05-01), Hoff, Jr.
patent: 4267558 (1981-05-01), Guterman
patent: 4267583 (1981-05-01), Suzuki
patent: 4371883 (1983-02-01), Potember et al.
patent: 4616340 (1986-10-01), Hayashi et al.
patent: 4631562 (1986-12-01), Avery
patent: 4652894 (1987-03-01), Potember et al.
patent: 4677742 (1987-07-01), Johnson
patent: 4727514 (1988-02-01), Bhuva et al.
patent: 4733375 (1988-03-01), Terashima
patent: 4834911 (1989-05-01), Carew
patent: 4839700 (1989-06-01), Ramesham et al.
patent: 4860254 (1989-08-01), Pott et al.
patent: 5012445 (1991-04-01), Kazuaki et al.
patent: 5034192 (1991-07-01), Wrighton et al.
patent: 5130380 (1992-07-01), Carew
patent: 5136212 (1992-08-01), Eguchi et al.
patent: 5153681 (1992-10-01), Kishimoto et al.
patent: 5196912 (1993-03-01), Matsumoto et al.
patent: 5206525 (1993-04-01), Yamamoto et al.
patent: 5245543 (1993-09-01), Smayling et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5315131 (1994-05-01), Kishimoto et al.
patent: 5319564 (1994-06-01), Smayling et al.
patent: 5355235 (1994-10-01), Nishizawa et al.
patent: 5392236 (1995-02-01), Hashimoto
patent: 5412614 (1995-05-01), Bird
patent: RE34974 (1995-06-01), Terashima
patent: 5431883 (1995-07-01), Barraud
patent: 5440518 (1995-08-01), Hazani
patent: 5563081 (1996-10-01), Ozawa
patent: 5572472 (1996-11-01), Kearney et al.
patent: 5579199 (1996-11-01), Kawamura et al.
patent: 5670818 (1997-09-01), Forouhi et al.
patent: 5691935 (1997-11-01), Douglass
patent: 5698874 (1997-12-01), Hayashi
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5770885 (1998-06-01), McCollum et al.
patent: 5818749 (1998-10-01), Harshfield
patent: 5849403 (1998-12-01), Aoki et al.
patent: 5869882 (1999-02-01), Chen et al.
patent: 5896312 (1999-04-01), Kozicki et al.
patent: 5900662 (1999-05-01), Frisina et al.
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6060338 (2000-05-01), Tanaka et al.
patent: 6064589 (2000-05-01), Walker
patent: 6088319 (2000-07-01), Gudesen
patent: 6118684 (2000-09-01), Yihong et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6150705 (2000-11-01), Chen
patent: 6288697 (2001-09-01), Eto et al.
patent: 6292396 (2001-09-01), Tailliet
patent: 6326936 (2001-12-01), Inganas et al.
patent: 6349054 (2002-02-01), Hidaka
patent: 6353559 (2002-03-01), Hasegawa et al.
patent: 6384427 (2002-05-01), Yamazaki et al.
patent: 6403396 (2002-06-01), Gudesen et al.
patent: 6403397 (2002-06-01), Katz
patent: 6407953 (2002-06-01), Cleeves
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6424553 (2002-07-01), Berggren et al.
patent: 6426891 (2002-07-01), Katori
patent: 6429457 (2002-08-01), Berggren et al.
patent: 6432739 (2002-08-01), Gudesen et al.
patent: 6449184 (2002-09-01), Kato et al.
patent: 6459095 (2002-10-01), Heath et al.
patent: 6461916 (2002-10-01), Adachi et al.
patent: 6487106 (2002-11-01), Kozicki et al.
patent: 6627944 (2003-09-01), Mandell et al.
patent: 20010014038 (2001-08-01), Hasegawa et al.
patent: 20010054709 (2001-12-01), Heath et al.
patent: 20010055384 (2001-12-01), Yamazaki et al.
patent: 20020027819 (2002-03-01), Tomanek et al.
patent: 20020101763 (2002-08-01), Hosogane et al.
patent: 20020104889 (2002-08-01), Forrest et al.
patent: 20020125504 (2002-09-01), Perlov et al.
patent: 20020134979 (2002-09-01), Yamazaki et al.
patent: 20020163030 (2002-11-01), Mandell et al.
patent: 20020163057 (2002-11-01), Bulovic et al.
patent: 20020163828 (2002-11-01), Krieger et al.
patent: 20020163829 (2002-11-01), Bulovic et al.
patent: 20020163830 (2002-11-01), Bulovic et al.
patent: 20020163831 (2002-11-01), Krieger et al.
patent: 20020168820 (2002-11-01), Kozicki et al.
patent: 196 40 239 (1998-04-01), None
patent: 199 59 904 (2001-06-01), None
patent: 0 268 370 (1988-05-01), None
patent: 0 385 688 (1990-09-01), None
patent: 0 727 822 (1996-08-01), None
patent: 7-106440 (1995-04-01), None
patent: 2071126 (1996-12-01), None
patent: WO 9304506 (1993-03-01), None
patent: WO 9904440 (1999-01-01), None
patent: WO 9908325 (1999-02-01), None
patent: WO 9914762 (1999-03-01), None
patent: WO 9919900 (1999-04-01), None
patent: WO 0026918 (2000-05-01), None
patent: WO 0048196 (2000-08-01), None
patent: WO 0235580 (2002-05-01), None
patent: WO 0237500 (2002-05-01), None
patent: WO 0243071 (2002-05-01), None
patent: WO 02178003 (2002-10-01), None
patent: WO 02091384 (2002-11-01), None
patent: WO 02091385 (2002-11-01), None
patent: WO 02091476 (2002-11-01), None
patent: WO 02091494 (2002-11-01), None
patent: WO 02091495 (2002-11-01), None
patent: WO 02091496 (2002-11-01), None
patent: WO 03017282 (2003-02-01), None
Reed, M.A. et al., “Molecular Random Access Memory Cell,”Applied Physics Letters, vol. 78, No. 23, pp. 3735-3737, Jun. 4, 2001.
Rossel, C. et al., “Electrical Current Distribution Across a Metal-Insulator-Metal Structure During Bistable Switching,” Apr. 24, 2001.
Rotman, David, “Molecular Memory,”Technology Review, May 2001.
Semiconductor Times, pp. 5-6, Jul. 2002.
Stikeman, Alexandra, “Polymer Memory: The Plastic Path to Better Data Storage,”Technology Review, p. 31, Sep. 2002.
Zhou, C. et al., “Nanoscale Metal/Self-Assembled Monolayer/Metal Heterostructures,”Applied Physics Letters, vol. 71, No. 5, pp. 611-613, Aug. 4, 1997.
“A Disrupted Organic Film: Could Memories Be Made of This?,”ORNL Review, vol. 33, No. 2, 2000.
“Technical Summary of Programmable Metallization Cell Memory Technology,” Version 1.3, Dec. 2001.
“The 1998 Conference Archive,”The Sixth Foresight Conference on Molecular Nanotechnology, Nov. 12-15, 1998, www.foresight.org/Conferences/MNT6/index.html.
Beck, A. et al., “Reproducible Switching Effect in Thin Oxide Films for Memory Applications,”Applied Physics Letters, vol. 77, No. 1, pp. 139-141, Jul. 3, 2000.
Bernard, Allen, “A Big Name in Chips Helps Coatue in Molecular Memory Race,” Aug. 27, 2000, www.nanoelectronicsplanet.com/features/article/0,4028,6571-1452831,00.html.
Chen, J. et al., “Room-temperature Negative Differential Resistance in Nanoscale Molecular Junctions,”Applied Physics Letters, vol. 77, No. 8, Aug. 21, 2000.
Collier, C. P. et al., “Electrically Configurable Molecular-Based Logic Gates,”Science, vol. 285, pp. 391-394, Jul. 16, 1999.
Gannon, Andrew, “Toward the Next Generation CD,”Physical Review Focus, Feb. 16, 2000.
Gao, H. J. et al., “Reversible, Nanometer-Scale Conductance Transistions in an Organic Complex,”Physical Review Letters, vol. 84, No. 8, pp. 1780-1783, Feb. 21, 2000.
Gao, H. J. et al., “Using a New Kind of Organic Complex System of Electrical Bistability for Ultrahigh Density Data Storage,” J. Vac. Sci. Technol. B vol. 15, No. 4, pp. 1581-1583, Jul./Aug. 1997.
International Search Report, PCT/RU01/00334, search completed Feb. 14, 2002.
International Search Report, PCT/US02/14236, search completed Aug. 14, 2002.
International Search Report, PCT/US02/14237, search completed Sep. 9, 2002.
International Search Report, PCT/US02/14238, search completed Aug. 9, 2002.
International Search Report, PCT/US02/14239, search completed Aug. 20, 2002.
Interna

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Molecular memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Molecular memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Molecular memory cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3400638

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.