Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2002-08-29
2009-12-29
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21008, C257SE51023, C438S190000, C365S151000, C977S933000
Reexamination Certificate
active
07638831
ABSTRACT:
A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.
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Bousseksou Azzedine
Demont Philippe
Letard Jean-Francois
Malaquin Laurent
Menegotto Jerôme
Centre National de la Recherche Scientifique "CNRS"
DLA Piper (LLP) US
Gurley Lynne A.
Matthews Colleen A
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