Molecular layers covalently bonded to silicon surfaces

Details Molecular layers covalently bonded to silicon surfaces Molecular layers covalently bonded to silicon surfaces

1993-12-22

1995-07-04

Powell, William

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 216 79, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

054297087

ABSTRACT:
A method for producing a molecular layer of a selected molecular moiety (44) on a silicon surface (40) is provided in which a silicon surface (10) is etched to form a hydrogenated silicon surface and combined with a free radical-producing compound, where the free radical produced by the free radical-producing compound corresponds to the selected molecular moiety (44). The combined silicon surface and free radical-producing compound is then heated to sufficient temperature to initiate reaction between the free radical-producing compound and the hydrogenated silicon surface.

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