Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2006-04-04
2006-04-04
Lund, Jeffrie R. (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230CB, C118S726000
Reexamination Certificate
active
07021238
ABSTRACT:
Epitaxy equipment including an epitaxy chamber under vacuum containing a substrate support and at least one cell under vacuum for evaporation of epitaxy material closed by a diaphragm having at least one opening and communicating with the epitaxy chamber by a connecting flange, and a mobile plate positioned opposite the diaphragm such that the distance of the plate from an exterior surface of the diaphragm is variable and has a section corresponding to a section of the diaphragm and a molecular beam is formed at the level of a zone surrounding the plate.
REFERENCES:
patent: 4424104 (1984-01-01), Harper et al.
patent: 4856457 (1989-08-01), Knauer
patent: 5026454 (1991-06-01), Parmenter et al.
patent: 5188671 (1993-02-01), Zinck et al.
patent: 5714008 (1998-02-01), Lee et al.
patent: 5906857 (1999-05-01), McKee et al.
patent: 5976263 (1999-11-01), Poole
patent: 6011904 (2000-01-01), Mattord
patent: 6342265 (2002-01-01), Kelson et al.
patent: 6617574 (2003-09-01), Kelson et al.
patent: 2002/0050160 (2002-05-01), Kelson et al.
patent: 2004/0129216 (2004-07-01), Bouchaib et al.
patent: 0 692 556 (1996-01-01), None
patent: 09 118590 (1997-05-01), None
patent: WO 97/06292 (1997-02-01), None
Random House Webster's Unabridged Dictionary, definition of “dihedron” p. 554, 2001.
Bouchaïb Pierre
Stemmelen Franck
Addon
DLA Piper Rudnick Gray Cary US LLP
Lund Jeffrie R.
LandOfFree
Molecular beam epitaxy equipment does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Molecular beam epitaxy equipment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Molecular beam epitaxy equipment will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3531677