Molecular beam epitaxial growth device and molecular beam contro

Details Molecular beam epitaxial growth device and molecular beam contro Molecular beam epitaxial growth device and molecular beam contro

1991-03-20

1992-03-17

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156611, 156612, 156DIG103, 437 8, 437105, 437107, 2502521, C30B 2516

Patent

active

050965336

ABSTRACT:
A measured molecular beam intensity V.sub.i is converted into a value V.sub.io at a reference temperature T.sub.O by calculating the following equation using the measured molecular beam intensity V.sub.i and a measured cell temperature T.sub.i : V.sub.io =V.sub.i .multidot.exp(A(1/T.sub.O -1/T.sub.i)). Next, a molecular beam intensity V.sub.O (t) at a time (t) is estimated after the last conversion time based on the reference temperature T.sub.o in accordance with the converted molecular beam intensity V.sub.io and a corresponding time t.sub.i thereof. Further, the temperature of a molecular beam source cell is controlled in accordance with an estimated cell temperature T.sub.SP (V.sub.SP), to realize a predetermined molecular beam intensity V.sub.SP, given by calculating the following equation using the estimated molecular beam intensity V.sub.O (t) and the predetermined molecular beam intensity V.sub.SP : T.sub.SP (V.sub.SP)=1/(1/T.sub.O +(log(V.sub.SP /V.sub.O (t)))/A).

REFERENCES:
patent: 3839084 (1974-10-01), Cho et al.
patent: 4119846 (1978-10-01), Outhwaite et al.
patent: 4636268 (1987-01-01), Tsang
patent: 4855013 (1989-08-01), Ohta et al.

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