Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1995-09-11
1998-07-28
Ostrowski, David
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257634, 257751, 257767, H01L 2358, H01L 2348
Patent
active
057866252
ABSTRACT:
A MOS type transistor with a gate is formed on the surface of a semiconductor substrate, and thereafter an interlayer insulating film and a first level wiring layer on the insulating film are formed. The wiring layer is patterned to cover the gate electrode. A second level interlayer insulating film is formed covering the wiring layer 16, and a second level wiring layer is formed on the second level interlayer insulating film. The second level interlayer insulating film is a laminate of a silicon oxide film formed by plasma CVD using tetraethoxysilane, a spin-on-glass (SOG) film, and another similar silicon oxide film, sequentially formed in this order. An auxiliary electrode layer (blocking layer) of the first level wiring layer covering the gate electrode prevents moisture contents from being diffused from the second level interlayer insulating film toward the gate electrode. The water content diffusion preventing function of the auxiliary electrode layer may also be realized by forming the auxiliary electrode layer separately from the wiring layer.
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S. Wolf, Ph.D., "Silicon Processing for the VLSI Era, vol. 2: Process Integration", Lattice Press, Sunset Beach, California, pp. 602-605, 632-642.
Realize Inc., "Improvement on Hot Carrier Resistance by ECR Oxide Film With Good Quality", Breakthrough Seminar, Japan, Dec. 17, 1993.
Ostrowski David
Yamaha Corporation
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