Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2007-07-26
2010-10-05
Nguyen, Ha Tran T (Department: 2829)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
Reexamination Certificate
active
07808267
ABSTRACT:
The present invention relates to a module and method for detecting a defect of a thin film transistor (TFT) substrate, which can detect disconnection of a gate line of the TFT substrate having gate drivers provided with a dual structure in which the gate drivers are provided at both sides of the gate lines. There is provided a module and method for detecting a defect of a TFT substrate, wherein gate lines are separated into two portions by cutting a central region of the gate lines, gate power is supplied to the gate lines of which central portions are cut through gate drivers provided at both sides of the gate lines, and a signal of a negative voltage level is supplied to data lines, so that disconnection of the gate lines can be detected.
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Hur Myung Koo
Kim Sung Man
Lee Hong Woo
Lee Jong Hwan
Lee Jong Hyuk
Campbell Shaun
Innovation Counsel LLP
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
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