Modulation-doped field-effect transistors and fabrication proces

Details Modulation-doped field-effect transistors and fabrication proces Modulation-doped field-effect transistors and fabrication proces

1997-04-10

1999-01-05

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438192, 438169, H01L 21283

Patent

active

058562176

ABSTRACT:
A process is provided for fabricating MODFET's in group III nitride compound semiconductors. The process precedes isolation of the MODFET structure with the use of e-beam lithography to define very narrow (e.g., .about.0.25 micrometer) gates which enhance transistor microwave cut-off frequency. Because these compound semiconductors resist chemical etchants, isolation is accomplished by etching with reactive ions to form an isolation mesa having a vertical mesa sidewall. To improve breakdown, the mesa sidewall is covered with a passivation layer prior to deposition of a gate feed that contacts the gate. To reduce parasitic gate capacitance, the gate feed is spaced from a narrow edge of the transistor's two-dimensional electron gas.

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