Modulated trigger device

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Reexamination Certificate

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C438S174000

Reexamination Certificate

active

07348251

ABSTRACT:
An integrated circuit structure, a trigger device and a method of electrostatic discharge protection, the integrated circuit structure including: a substrate having a top surface defining a horizontal direction, the substrate of a first dopant type; a first horizontal layer in the substrate, the first layer of a second dopant type; and a second horizontal layer of the first dopant type, the second layer on top of the first layer and between the top surface of the substrate and the first layer, the second layer electrically modulated by the first layer.

REFERENCES:
patent: 4992844 (1991-02-01), Yakushiji
patent: 5929478 (1999-07-01), Parris et al.
patent: 6429723 (2002-08-01), Hastings
patent: 6864152 (2005-03-01), Mirbedini et al.
patent: 2002/0105021 (2002-08-01), Myono et al.
patent: 2002/0149029 (2002-10-01), Wu et al.

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