Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-08-10
2008-03-25
Dickey, Thomas L. (Department: 2826)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S174000
Reexamination Certificate
active
07348251
ABSTRACT:
An integrated circuit structure, a trigger device and a method of electrostatic discharge protection, the integrated circuit structure including: a substrate having a top surface defining a horizontal direction, the substrate of a first dopant type; a first horizontal layer in the substrate, the first layer of a second dopant type; and a second horizontal layer of the first dopant type, the second layer on top of the first layer and between the top surface of the substrate and the first layer, the second layer electrically modulated by the first layer.
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patent: 2002/0105021 (2002-08-01), Myono et al.
patent: 2002/0149029 (2002-10-01), Wu et al.
Voldman Steven H.
Zierak Michael J.
Dickey Thomas L.
LeStrange Michael
Schmeiser Olsen & Watts
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