Modulated-structure of PZT/PT ferroelectric thin films for non-v

Details Modulated-structure of PZT/PT ferroelectric thin films for non-v Modulated-structure of PZT/PT ferroelectric thin films for non-v

1992-03-13

1998-12-15

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 22, 257183, H01L 2976, H01L 2974, H01L 31062, H01L 31113

Patent

active

058500898

ABSTRACT:
Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380.degree. C. to about 650.degree. C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.

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