Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-10-16
2007-10-16
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S773000, C257S774000, C257SE23160
Reexamination Certificate
active
10964882
ABSTRACT:
The present invention provides an interconnect structure that can be made in the BEOL which exhibits good mechanical contact during normal chip operations and does not fail during various reliability tests as compared with the conventional interconnect structures described above. The inventive interconnect structure has a kinked interface at the bottom of a via that is located within an interlayer dielectric layer. Specifically, the inventive interconnect structure includes a first dielectric layer having at least one metallic interconnect embedded within a surface thereof; a second dielectric layer located atop the first dielectric layer, wherein said second dielectric layer has at least one aperture having an upper line region and a lower via region, wherein the lower via region includes a kinked interface; at least one pair of liners located on at least vertical walls of the at least one aperture; and a conductive material filling the at least one aperture.
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Clevenger Lawrence A.
Dalton Timothy Joseph
Hsu Louis C.
Murray Conal Eugene
Radens Carl
Lee Eugene
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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