Modified source/drain re-oxidation method and system

Details Modified source/drain re-oxidation method and system Modified source/drain re-oxidation method and system

2007-09-18

2007-09-18

Owens, Douglas W. (Department: 2821)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000

Reexamination Certificate

active

10072015

ABSTRACT:
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self-aligned source resistance.

REFERENCES:
patent: 5094984 (1992-03-01), Liu et al.
patent: 5194929 (1993-03-01), Ohshima et al.
patent: 5298447 (1994-03-01), Hong
patent: 5397724 (1995-03-01), Nakajima et al.
patent: 5596213 (1997-01-01), Lee
patent: 5726470 (1998-03-01), Sato
patent: 5763309 (1998-06-01), Chang
patent: 5851881 (1998-12-01), Lin et al.
patent: 5856222 (1999-01-01), Bergemont et al.
patent: 5874759 (1999-02-01), Park
patent: 6033954 (2000-03-01), Park
patent: 6235581 (2001-05-01), Chen
patent: 6252274 (2001-06-01), Colabella
patent: 6268624 (2001-07-01), Sobek et al.
patent: 6303959 (2001-10-01), Ratnam
patent: 6329225 (2001-12-01), Rodder
patent: 6417049 (2002-07-01), Sung et al.
patent: 6437444 (2002-08-01), Andideh
patent: 6646919 (2003-11-01), Madurawe et al.
patent: 6649308 (2003-11-01), Wu
patent: 6657893 (2003-12-01), Takahashi et al.
patent: 6732241 (2004-05-01), Riedel
Hisayo Sasaki Momose et al, High-Frequency AC Characteristics of 1.5nm Gate Oxide Mosfets, 0-7803-3393-4, 1996, IEE, 96-105-96-108.
Hisayo Sasaki Momose et al., Tunneling Gate Oxide Approach to Ultra-High Current Drive in Small-Geometry Mosfets, 0-7803-2111-1 1994, IEE, IEDM, 593-596.

Affiliated with

Also associated with

Rating

Modified source/drain re-oxidation method and system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modified source/drain re-oxidation method and system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modified source/drain re-oxidation method and system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3796918