Modified RIE chamber for uniform silicon etching

Details Modified RIE chamber for uniform silicon etching Modified RIE chamber for uniform silicon etching

1980-09-10

1982-07-20

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 204192E, C23C 1500, C23F 100

Patent

active

043404618

ABSTRACT:
A plasma enhancing baffle plate is employed in conjunction with the anode of an RIE system to provide uniform silicon etching. The baffle plate is conductively coupled to and provided in relatively close proximity to the anode to form a constricted chamber region between anode and baffle plate. With the constricted chamber open to the RIE chamber through aperture means in the baffle plate the total surface area of the anode is increased, such that when the system is biased to operate in an RIE mode an increase in the generation of neutral etching species is effected. Various aperture arrangements may be employed to provide different patterns of neutral etching species generation, in accordance with the peculiar characteristics of the system employed.

REFERENCES:
patent: 3410774 (1968-11-01), Barson et al.
patent: 3733258 (1971-02-01), Hanak et al.
patent: 4119881 (1978-10-01), Calderon
patent: 4148705 (1979-04-01), Battey et al.
patent: 4209357 (1980-06-01), Gorin et al.
A. Galicki et al., "Plasma Reaction Chamber", IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov. 1977, p. 2211.
L. M. Ephrath, "Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF.sub.4 -H.sub.2 ", J. Electrochem. Soc.: SOLID-STATE SCIENCE AND TECHNOLOGY, Aug. 1979, pp. 1419-1421.
J. J. Cuomo et al., "Device for Controlling Ion-Beam Size", IBM Technical Disclosure Bulletin, vol. 21, No. 7, Dec. 1978, pp. 3036, 3037.

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