Modified multilayered metal line structure for use with tungsten

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257764, 257765, H01L 2348, H01L 2352, H01L 2940

Patent

active

061474096

ABSTRACT:
A composite metal line structure for an integrated circuit structure on a semiconductor substrate is disclosed which comprises: a low resistance metal core layer; a first thin protective layer of electrically conductive material on the upper surface of the metal core layer capable of protecting the metal core layer from reaction with tungsten; a layer of tungsten formed over the first protective layer to function as an etch stop layer for vias subsequently formed in an overlying dielectric layer; and a second thin protective layer of electrically conductive material over the tungsten layer and capable of functioning as an antireflective coating (ARC). When a dielectric layer is formed over the composite metal line structure, tungsten-filled vias can be formed in the dielectric layer which will extend down through the second thin protective layer to provide direct electrical contact between the tungsten-filled via and the tungsten layer of the composite metal line structure, thereby providing a low resistance contact between the tungsten-filled via and the composite metal line structure.

REFERENCES:
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patent: 5475267 (1995-12-01), Ishii et al.
patent: 5600182 (1997-02-01), Schinella et al.
patent: 5635763 (1997-06-01), Inoue et al.
patent: 5719446 (1998-02-01), Taguchi et al.
patent: 5793113 (1998-08-01), Oda
patent: 5817574 (1998-10-01), Gardner

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