Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-06-15
2000-11-14
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257764, 257765, H01L 2348, H01L 2352, H01L 2940
Patent
active
061474096
ABSTRACT:
A composite metal line structure for an integrated circuit structure on a semiconductor substrate is disclosed which comprises: a low resistance metal core layer; a first thin protective layer of electrically conductive material on the upper surface of the metal core layer capable of protecting the metal core layer from reaction with tungsten; a layer of tungsten formed over the first protective layer to function as an etch stop layer for vias subsequently formed in an overlying dielectric layer; and a second thin protective layer of electrically conductive material over the tungsten layer and capable of functioning as an antireflective coating (ARC). When a dielectric layer is formed over the composite metal line structure, tungsten-filled vias can be formed in the dielectric layer which will extend down through the second thin protective layer to provide direct electrical contact between the tungsten-filled via and the tungsten layer of the composite metal line structure, thereby providing a low resistance contact between the tungsten-filled via and the composite metal line structure.
REFERENCES:
patent: 5360995 (1994-11-01), Grass
patent: 5475267 (1995-12-01), Ishii et al.
patent: 5600182 (1997-02-01), Schinella et al.
patent: 5635763 (1997-06-01), Inoue et al.
patent: 5719446 (1998-02-01), Taguchi et al.
patent: 5793113 (1998-08-01), Oda
patent: 5817574 (1998-10-01), Gardner
Chen Fred
Hsia Shouli Steve
Tsai Jiunn-Yann
Cao Phat X.
Chaudhuri Olik
LSI Logic Corporation
Taylor John P.
LandOfFree
Modified multilayered metal line structure for use with tungsten does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Modified multilayered metal line structure for use with tungsten, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modified multilayered metal line structure for use with tungsten will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2067882